Superior artificial synaptic properties applicable to neuromorphic computing system in HfO(x)-based resistive memory with high recognition rates
基于HfO(x)的电阻式存储器具有优异的人工突触特性,适用于神经形态计算系统,且识别率高
期刊:Discover Nano
影响因子:4.5
doi:10.1186/s11671-023-03868-8
Yempally, Swathi; Kacem, Eya; Ponnamma, Deepalekshmi; Lu, Chan-Hung; Tarntair, Fu-Gow; Kao, Yu-Cheng; Tumilty, Niall; Shieh, Jia-Min; Hsu, Shao-Hui; Hsiao, Ching-Lien; Horng, Ray-Hua; Liu, Changlin; To, Suet; Sheng, Xuexiang; Wang, Ruoxin; Xu, Jianfeng; Seo, Hyun Kyu; Lee, Su Yeon; Yang, Min Kyu