Sub-2 nm Equivalent-Oxide-Thickness Ferroelectric Transistors for Cryogenic Memory and Computing
用于低温存储和计算的亚2纳米等效氧化层厚度铁电晶体管
期刊:ACS Nano
影响因子:16
doi:10.1021/acsnano.5c16255
Das, Apu; Senapati, Asim; Kumar, Gautham; Lou, Zhao-Feng; Müller, Jonas; Maskeen, Jaskirat Singh; Chang, Yii-Tay; Tewari, Mohit; Agarwal, Ankit; Paul, Agniva; Raffel, Yannick; Maikap, Siddheswar; Kao, Kuo-Hsing; Agarwal, Tarun; Lashkare, Sandip; Lu, Darsen; Larrieu, Guilhem; Lee, Min-Hung; De, Sourav