日期:
2020 年 — 2026 年
2020
2021
2022
2023
2024
2025
2026
影响因子:

Size-Dependent Emission Enhancement in Deep-Ultraviolet AlGaN Microrods

深紫外AlGaN微棒的尺寸依赖性发射增强

Sun, Xu; Yan, Ziwen; Xu, Tong; Zhu, Jiajun; Xie, Zili; Xiu, Xiangqian; Chen, Dunjun; Liu, Bin; Shi, Yi; Zhang, Rong; Zheng, Youdou; Chen, Peng

Observation of ultraviolet photothermoelectric bipolar impulse in gallium-based heterostructure nanowires

镓基异质结构纳米线中紫外光热电双极脉冲的观测

Zhu, Jinjie; Cai, Qing; Shao, Pengfei; Zhang, Shengjie; You, Haifan; Guo, Hui; Wang, Jin; Xue, Junjun; Liu, Bin; Lu, Hai; Zheng, Youdou; Zhang, Rong; Chen, Dunjun

Electromagnetic Nanocoils Based on InGaN Nanorings

基于InGaN纳米环的电磁纳米线圈

Yan, Ziwen; Chen, Peng; Zhang, Xianfei; Xie, Zili; Xiu, Xiangqian; Chen, Dunjun; Zhao, Hong; Shi, Yi; Zhang, Rong; Zheng, Youdou

Stable single-mode operation of distributed feedback quantum cascade laser under high current via a grating reflector

通过光栅反射器实现高电流下分布式反馈量子级联激光器的稳定单模运转

Ye, Fan; Cheng, Fengmin; Jia, Zhiwei; Zhang, Jinchuan; Zhuo, Ning; Liu, Fengqi; Zheng, Youdou; Shi, Yi

Multi-height metasurface for wavefront manipulation fabricated by direct laser writing lithography

采用直接激光写入光刻技术制造的多高度超表面用于波前操控

Ye, Fan; Pivnenko, Mike; Huang, Huiyu; Chang, Xin; Robinson, Lee; Zheng, Youdou; Shi, Yi; Chu, Daping

AlGaN Quantum Disk Nanorods with Efficient UV-B Emission Grown on Si(111) Using Molecular Beam Epitaxy

利用分子束外延法在Si(111)衬底上生长具有高效UV-B发射的AlGaN量子盘纳米棒

Zhang, Dongqi; Tao, Tao; Sun, Haiding; Li, Siqi; Jia, Hongfeng; Yu, Huabin; Shao, Pengfei; Li, Zhenhua; Wu, Yaozheng; Xie, Zili; Wang, Ke; Long, Shibing; Liu, Bin; Zhang, Rong; Zheng, Youdou

Evaluation on Temperature-Dependent Transient V(T) Instability in p-GaN Gate HEMTs under Negative Gate Stress by Fast Sweeping Characterization

通过快速扫描表征评估负栅应力下p-GaN栅HEMT的温度相关瞬态V(T)不稳定性

Wang, Rui; Guo, Hui; Hou, Qianyu; Lei, Jianming; Wang, Jin; Xue, Junjun; Liu, Bin; Chen, Dunjun; Lu, Hai; Zhang, Rong; Zheng, Youdou

Low Leakage Current and High Breakdown Field AlGaN/GaN MIS-HEMTs Using PECVD-SiNx as a Gate Dielectric

采用PECVD-SiNx作为栅极介质的低漏电流、高击穿场AlGaN/GaN MIS-HEMT器件

Gao, Xiaohui; Guo, Hui; Wang, Rui; Pan, Danfeng; Chen, Peng; Chen, Dunjun; Lu, Hai; Zhang, Rong; Zheng, Youdou

Effects of uninterrupted dabigatran on the intensity of anticoagulation during atrial fibrillation ablation

达比加群不间断用药对房颤消融术期间抗凝强度的影响

Osawa, Takumi; Mori, Hitoshi; Kawai, Akane; Kawano, Daisuke; Tsutsui, Kenta; Ikeda, Yoshifumi; Yamaga, Mitsuki; Sato, Atsushi; Gatate, Youdou; Hamabe, Akira; Tabata, Hirotsugu; Kato, Ritsushi; Matsumoto, Kazuo

Progress on AlGaN-based solar-blind ultraviolet photodetectors and focal plane arrays

基于AlGaN的日盲紫外光电探测器和焦平面阵列的研究进展

Cai, Qing; You, Haifan; Guo, Hui; Wang, Jin; Liu, Bin; Xie, Zili; Chen, Dunjun; Lu, Hai; Zheng, Youdou; Zhang, Rong