High drain field impact ionization transistors as ideal switches
高漏极场冲击电离晶体管作为理想开关
期刊:Nature Communications
影响因子:15.7
doi:10.1038/s41467-024-53337-8
Yuan, Baowei; Chen, Zhibo; Chen, Yingxin; Tang, Chengjie; Chen, Weiao; Cheng, Zengguang; Zhao, Chunsong; Hou, Zhaozhao; Zhang, Qiang; Gan, Weizhuo; Gao, Jiacheng; Wang, Jiale; Xu, Jeffrey; Hu, Guangxi; Wu, Zhenhua; Luo, Kun; Luo, Mingyan; Zhang, Yuanbo; Zhang, Zengxing; Xiong, Shisheng; Cong, Chunxiao; Bao, Wenzhong; Ma, Shunli; Wan, Jing; Zhou, Peng; Lu, Ye
