日期:
2020 年 — 2026 年
2020
2021
2022
2023
2024
2025
2026
影响因子:

Sublingual Edaravone Dexborneol for the Treatment of Acute Ischemic Stroke: The TASTE-SL Randomized Clinical Trial

舌下含服依达拉奉右冰片醇治疗急性缺血性卒中:TASTE-SL随机临床试验

Fu, Yu; Wang, Anxin; Tang, Renhong; Li, Shuya; Tian, Xue; Xia, Xue; Ren, Jinsheng; Yang, Shibao; Chen, Rong; Zhu, Shunwei; Feng, Xiaofei; Yao, Jinliang; Wei, Yan; Dong, Xueshuang; Ling, Yun; Yi, Fei; Deng, Qian; Guo, Cunju; Sui, Yi; Han, Shugen; Wen, Guoqiang; Li, Chuanling; Dong, Aiqin; Sun, Xin; Wang, Zhimin; Shi, Xueying; Liu, Bo; Fan, Dongsheng

Efficacy and safety of Y-2 sublingual tablet for patients with acute ischaemic stroke: protocol of a phase III randomised double-blind placebo-controlled multicentre trial

Y-2舌下片治疗急性缺血性卒中患者的疗效和安全性:一项III期随机双盲安慰剂对照多中心试验方案

Fu, Yu; Tang, Renhong; Chen, Rong; Wang, Anxin; Ren, Jinsheng; Zhu, Shunwei; Feng, Xiaofei; Fan, Dongsheng

A novel form of docetaxel polymeric micelles demonstrates anti-tumor and ascites-inhibitory activities in animal models as monotherapy or in combination with anti-angiogenic agents.

一种新型的多西他赛聚合物胶束在动物模型中表现出抗肿瘤和抑制腹水的活性,可作为单一疗法或与抗血管生成药物联合使用

Guo Leilei, Qin Xiaokang, Xue Liting, Yang Janine Y, Zhang Yumei, Zhu Shunwei, Ye Gang, Tang Renhong, Yang WenQing

An Improved P-Type Doped Barrier Surface AlGaN/GaN High Electron Mobility Transistor with High Power-Added Efficiency

一种改进的P型掺杂势垒表面AlGaN/GaN高电子迁移率晶体管,具有高功率附加效率

Jia, Hujun; Wang, Xiaowei; Dong, Mengyu; Zhu, Shunwei; Yang, Yintang

A Novel 4H-SiC MESFET with a Heavily Doped Region, a Lightly Doped Region and an Insulated Region

一种新型4H-SiC MESFET,具有重掺杂区、轻掺杂区和绝缘区。

Jia, Hujun; Dong, Mengyu; Wang, Xiaowei; Zhu, Shunwei; Yang, Yintang

Novel High-Energy-Efficiency AlGaN/GaN HEMT with High Gate and Multi-Recessed Buffer

新型高能效AlGaN/GaN HEMT,具有高栅极电压和多凹槽缓冲层

Zhu, Shunwei; Jia, Hujun; Li, Tao; Tong, Yibo; Liang, Yuan; Wang, Xingyu; Zeng, Tonghui; Yang, Yintang

An Improved 4H-SiC MESFET with a Partially Low Doped Channel

一种改进的4H-SiC MESFET,具有部分低掺杂沟道

Jia, Hujun; Tong, Yibo; Li, Tao; Zhu, Shunwei; Liang, Yuan; Wang, Xingyu; Zeng, Tonghui; Yang, Yintang

Improved MRD 4H-SiC MESFET with High Power Added Efficiency

改进型 MRD 4H-SiC MESFET,具有高功率附加效率

Zhu, Shunwei; Jia, Hujun; Wang, Xingyu; Liang, Yuan; Tong, Yibo; Li, Tao; Yintang, Yang

Improved DRUS 4H-SiC MESFET with High Power Added Efficiency

改进型 DRUS 4H-SiC MESFET,具有高功率附加效率

Jia, Hujun; Liang, Yuan; Li, Tao; Tong, Yibo; Zhu, Shunwei; Wang, Xingyu; Zeng, Tonghui; Yang, Yintang

An Improved UU-MESFET with High Power Added Efficiency

一种改进型高功率、高效率的UU-MESFET

Jia, Hujun; Hu, Mei; Zhu, Shunwei