Integer topological defects offer a methodology to quantify and classify active cell monolayers.

整数拓扑缺陷提供了一种量化和分类活性细胞单层的方法

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作者:Zhao Zihui, Li He, Yao Yisong, Zhao Yongfeng, Serra Francesca, Kawaguchi Kyogo, Zhang Hepeng, Sano Masaki
Monolayers of confluent elongated cells are frequently considered active nematics, featuring ±½ topological defects. In extensile systems, where cells extend further along their long axis, they can accumulate at + ½ defects and escape from - ½ defects. Nevertheless, collective dynamics surrounding integer defects remain insufficiently understood. We induce diverse  + 1 topological defects (asters, spirals, and targets) within neural progenitor cell monolayers using microfabricated patterns. Remarkably, cells migrate toward the cores of all  + 1 defects, challenging existing theories and conventional extensile/contractile dichotomy, which predicts escape from highly bent spirals and targets. By combining experiments and a continuum theory derived from a cell-level model, we identify previously overlooked nonlinear active forces driving this unexpected accumulation toward defect cores, providing a unified framework to explain cell behavior across defect types. Our findings establish  + 1 defects as probes to uncover key nonlinear features of active nematics, offering a methodology to characterize and classify cell monolayers.

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