Engineering the structural and electrical interplay of nanostructured Au resistive switching networks by controlling the forming process.

Networks of random-assembled gold clusters produced in the gas phase show resistive switching (RS) activity at room temperature and they are suitable for the fabrication of devices for neuromorphic data processing and classification. Fully connected cluster-assembled nanostructured Au films are characterized by a granular structure rich of interfaces, grain boundaries and crystalline defects. Here we report a systematic characterization of the electroforming process of the cluster-assembled films demonstrating how this process affects the interplay between the nano- and mesoscale film structure and the neuromorphic characteristics of the resistive switching activity. The understanding and the control of the influence of the resistive switching forming process on the organization of specific structures at different scales of the cluster-assembled films, provide the possibility to engineer random-assembled neuromorphic architectures for data processing task.