High motional resistance and incompatibility with post-CMOS fabrication due to thermal budget constraints are imperative issues associated with the back-end-of-line integration of lateral extensional vibrating micromechanical resonators. This paper presents piezoelectric ZnO-on-nickel resonators as a viable means for mitigating both of the issues. Lateral extensional mode resonators equipped with thin-film piezoelectric transducers can exhibit much lower motional impedances than their capacitive counterparts due to piezo-transducers' higher electromechanical coupling coefficients. Meanwhile, the employment of electroplated nickel as the structural material allows the process temperature to be kept lower than 300 °C, which is low enough for the post-CMOS resonator fabrication. In this work, various geometrical rectangular and square plates resonators are investigated. Moreover, parallel combination of several resonators into a mechanically coupled array was explored as a systematic approach to lower motional resistance from ~1 kΩs to 0.562 kΩs. Higher order modes were investigated for achieving higher resonance frequencies up to 1.57 GHz. Local annealing by Joule heating was also exploited for quality factor improvement after device fabrication by ~2à enhancement and breaking the record of MEMS electroplated nickel resonators in lowering insertion loss to ~10 dB.
Lateral Extensional Mode Piezoelectric ZnO-on-Nickel RF MEMS Resonators for Back-End-of-Line Integration.
用于后端集成的横向扩展模式压电 ZnO-on-Nick 射频 MEMS 谐振器
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作者:Zaman Adnan, Alsolami Abdulrahman, Wei Mian, Rivera Ivan, Baghelani Masoud, Wang Jing
| 期刊: | Micromachines | 影响因子: | 3.000 |
| 时间: | 2023 | 起止号: | 2023 May 22; 14(5):1089 |
| doi: | 10.3390/mi14051089 | ||
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