Abstract
Thanks to high performance above room temperature, antimonide laser diodes have shown great potential for broad application in the mid-infrared spectral region. However, the laser`s performance noticeably deteriorates due to the reduction of carrier confinement with increased emission wavelength. In this paper, a novel active region with higher carrier confinements both of electron and hole, by the usage of an indirect bandgap material of Al(0.5)GaAs(0.04)Sb as the quantum barrier, was put up to address the poor carrier confinement of GaSb-based type-I multi-quantum-well (MQW) diode lasers emission wavelength above 2.5 µm. The carrier confinement and the differential gain in the designed active region are enhanced as a result of the first proposed usage of an indirect-gap semiconductor as the quantum barrier with larger band offsets in conduction and valence bands, leading to high internal quantum efficiency and low threshold current density of our lasers. More importantly, the watt-level output optical power is obtained at a low injection current compared to the state of the art. Our work demonstrates a direct and cost-effective solution to address the poor carrier confinement of the GaSb-based MQW lasers, thereby achieving high-power mid-infrared lasers.