Abstract
Strong localization effect in self-assembled InGaN quantum dots (QDs) grown by metalorganic chemical vapor deposition has been evidenced by temperature-dependent photoluminescence (PL) at different excitation power. The integrated emission intensity increases gradually in the range from 30 to 160 K and then decreases with a further increase in temperature at high excitation intensity, while this phenomenon disappeared at low excitation intensity. Under high excitation, about 40% emission enhancement at 160 K compared to that at low temperature, as well as a higher internal quantum efficiency (IQE) of 41.1%, was observed. A strong localization model is proposed to describe the possible processes of carrier transport, relaxation, and recombination. Using this model, the evolution of excitation-power-dependent emission intensity, shift of peak energy, and linewidth variation with elevating temperature is well explained. Finally, two-component decays of time-resolved PL (TRPL) with various excitation intensities are observed and analyzed with the biexponential model, which enables us to further understand the carrier relaxation dynamics in the InGaN QDs.