Abstract
Here we synthesized a novel Ag/Si composite sub-micro particle using galvanic displacement by capitalizing on the active chemical surface of Si particles sludge from wafer-slicing process. Si works as chemical reactant, as well as reaction site to form composite particles. Sequent structural characterizations and analysis which include X-ray diffraction, transmission electron microscopy, scanning electron microscope, energy dispersive X-ray and electrical properties of this composite particle were done. A well-proved hetero-epitaxial growth mechanism could explain Ag nano-island/layer with a satisfactory bond property deposited on the Si surface. Since these Si are mechanically cleaved from crystal, formed conductive Ag/Si composites retain the flake shape from Si sludge particles, and narrow size distribution. They are preferred as conductive fillers, an Ag/Si composite-based conductive ink was prepared, its conductance was tested through screen printing, film thickness and resistivity were measured. The resistivity reached the µΩ cm level, even without optimizing the ink formulation. Our methods not only convert this Si sludge into highly conductive composite particles as filler for applications, but also considerably reduce the consumption of precious metal.