Abstract
HgSe quantum dots (QDs) were synthesized by a thermal injection method. The effects of material ratio, growth time, and reaction temperature on the growth and spectral properties of the QDs have been studied. The experimental results show that the QDs had the highest yield of 53.04% when the molar ratio of Se source to Hg source was 1.5. Also, the excess source of SeS(2) was reduced to Se. In addition, the critical radius and spectral red-shift rate of QDs can be increased with the reaction temperature. When the reaction temperature was increased to 100 °C, the spectrum reached far-infrared and the growth rate was increased to 10 times and reached 0.63 nm/min. Differing particle morphologies can be obtained by increasing the growth time to 40 min. Moreover, the growth rate reached the minimum at 30 min and the maximum at 80 min of the growth time. This study can provide guidance for the synthesis of long-wave infrared QD materials.