Abstract
This study demonstrates the deposition of tellurium (Te) on silicon/silicon nitride substrates using solution atomic layer deposition (sALD) at ambient temperature. The process employs tellurium tetrachloride (TeCl(4)) and bis(triethylsilyl)-telluride ((TES)(2)Te) as precursors, with toluene as the solvent. Growth parameters were optimized through systematic variation of the pulse and purge times. Morphological characterization via scanning and transmission electron microscopy revealed needle-like crystallites, while X-ray diffractometry confirmed the crystalline nature of the deposited Te. Increasing the number of deposition cycles resulted in larger Te crystallites and enhanced substrate surface coverage. A thin amorphous carbon shell surrounding the crystallites and carbon inclusions was observed, likely originating from the organic solvent. X-ray photoemission spectroscopy analysis indicated high-purity Te films with minimal surface oxidation. The small chlorine signal suggested a near-complete precursor reaction and the efficient purging of byproducts. This novel sALD approach presents a promising method for depositing Te on various surfaces under mild conditions.