Abstract
Integration of devices generating non-classical states (such as entanglement) into photonic circuits is one of the major goals in achieving integrated quantum circuits (IQCs). This is demonstrated successfully in recent decades. Controlling the non-classicality generation in these micron-scale devices is also crucial for the robust operation of the IQCs. Here, we propose a micron-scale quantum entanglement device whose nonlinearity (so the generated non-classicality) can be tuned by several orders of magnitude via an applied voltage without altering the linear response. Quantum emitters (QEs), whose level-spacing can be tuned by voltage, are embedded into the hotspot of a metal nanostructure (MNS). QE-MNS coupling introduces a Fano resonance in the "nonlinear response". Nonlinearity, already enhanced extremely due to localization, can be controlled by the QEs' level-spacing. Nonlinearity can either be suppressed or be further enhanced by several orders. Fano resonance takes place in a relatively narrow frequency window so that ∼meV voltage-tunability for QEs becomes sufficient for a continuous turning on/off of the non-classicality. This provides as much as 5 orders of magnitude modulation depths.