Abstract
In this paper, we demonstrate the first example of phonon-assisted hot luminescence (PAHL) emission from silicon (Si) spheres (diameter > 100nm) without using the plasmonic effect or quantum confinement effect. Instead, we excite the hot luminescence of Si by a strong thin-film-cavity-enhanced magnetic dipole resonance. The thin-film cavity (80 nm SiO(2)/Ag) shows a strong co-enhancement with the magnetic dipole resonance of Si sphere (diameter = 120 nm). The concentrated electromagnetic fields induce significant light-matter interaction. Our Si sphere coupled with a thin-film cavity achieves a 10-fold field enhancement relative to the Si sphere without an enhancement substrate. Furthermore, we experimentally use cavity-enhanced magnetic dipole resonance to a 50-fold enhancement in PAHL. The measured internal quantum efficiency for the visible light emitted from the Si spheres was approximately 2.4%. Furthermore, we demonstrate the tunability of emission peaks merely by adjusting the sizes of Si spheres using thermal oxidation and etching processes. For comparison, we calculated the peak wavelength (λ (peak)) sensitivities (Δλ (peak)/ΔDiameter) of Si spheres and Si QDs through Mie theory and effective mass approximation, respectively. The predicated peak sensitivities of the Si spheres ranged from 1.3 to 3.2; they were much more controllable than those of the Si QDs (200-400). Thus, the peak wavelengths of the PAHL of the Si spheres could be modulated and controlled much more precisely and readily than that of the Si QDs. With the tunability and strong electromagnetic field confinement, the cavity-enhanced magnetic dipole resonance appears to have great potential in the development of all-optical processing based on Si photonics.