Abstract
We report an enhancement in light emission efficiency of Si nanocrystal (NC) light-emitting diodes (LEDs) by employing 5.5 periods of SiCN/SiC superlattices (SLs). SiCN and SiC layers in SiCN/SiC SLs were designed by considering the optical bandgap to induce the uniform electron sheet parallel to the SL planes. The electrical property of Si NC LED with SiCN/SiC SLs was improved. In addition, light output power and wall-plug efficiency of the Si NC LED with SiCN/SiC SLs were also enhanced by 50% and 40%, respectively. This was attributed to both the formation of two-dimensional electron gas, i.e., uniform electron sheet parallel to the SiCN/SiC SL planes due to the conduction band offset between the SiCN layer and SiC layer, and an enhanced electron transport into the Si NCs due to a lower tunneling barrier height. We show here that the use of the SiCN/SiC SL structure can be very useful in realizing a highly efficient Si NC LED.