Abstract
In this protocol, we present a facile nanoscale thermal mapping technique for electronic devices by use of atomic force microscopy and a phase change material Ge(2)Sb(2)Te(5). We describe steps for Ge(2)Sb(2)Te(5) thin film coating, Ge(2)Sb(2)Te(5) temperature calibration, thermal mapping by varying heater power, and thermal mapping by varying heating time. The protocol can be applied for resolving surface temperatures of various operational microelectronic devices with a nanoscale precision. For complete details on the use and execution of this protocol, please refer to Cheng et al.(1).