Abstract
Recently, Fano resonance modulators and photonic crystal nanobeam cavities (PCNCs) have attracted more and more attention due to their superior performance, such as high modulation efficiency and high extinction ratio (ER). In this paper, a silicon Fano resonance Mach-Zehnder modulator (MZM) based on a single arm coupled with a PCNC is theoretically analyzed, designed, and numerically simulated. By optimizing the coupling length, lattice constant, coupling gap, and the number of holes in the mirror/taper region, the ER of our MZM can achieve 34 dB. When the applied voltage of the MZM is biased at 4.3 V and the non-return-to-zero on-off keying (NRZ-OOK) signal at a data rate of 10 Gbit/s is modulated, the sharpest asymmetric resonant peak and the most remarkable Fano line shape can be obtained around a wavelength of 1550.68 nm. Compared with the traditional nanobeam cavities, along with the varying radii, our PCNC design has holes with a fixed radius of 90 nm, which is suitable to be fabricated by a 180 nm passive silicon photonic multi-project wafer (MPW). Therefore, our compacted lab-on-chip, resonance-based silicon photonic MZM that is coupled with a PCNC has the advantages of superior performance and easy fabrication, which provide support for photonic integrated circuit designs and can be beneficial to various silicon photonic application fields, including photonic computing, photonic convolutional neural networks, and optical communications, in the future.