Abstract
Nanoporosity in silicon results in interface-dominated mechanics, fluidics, and photonics that are often superior to the ones of the bulk material. However, their active control, for example, by electronic stimuli, is challenging due to the absence of intrinsic piezoelectricity in the base material. Here, for large-scale nanoporous silicon cantilevers wetted by aqueous electrolytes, electrosorption-induced mechanical stress generation of up to 600 kPa that is reversible and adjustable at will by potential variations of ≈1 V is shown. Laser cantilever bending experiments in combination with in operando voltammetry and step coulombmetry allow this large electro-actuation to be traced to the concerted action of 100 billions of parallel nanopores per square centimeter cross-section and determination of the capacitive charge-stress coupling parameter upon ion adsorption and desorption as well as the intimately related stress actuation dynamics for perchloric and isotonic saline solutions. A comparison with planar silicon surfaces reveals mechanistic insights on the observed electrocapillarity (Hellmann-Feynman interactions) with respect to the importance of oxide formation and wall roughness on the single-nanopore scale. The observation of robust electrochemo-mechanical actuation in a mainstream semiconductor with wafer-scale, self-organized nanoporosity opens up novel opportunities for on-chip integrated stress generation and actuorics at exceptionally low operation voltages.