Abstract
We theoretically investigate a metasurface perfect absorber based on indium-tin-oxide as active material. Our design scheme relies on conventional metal-oxide-semiconductor model and the Drude model. Inducing a voltage into the device causes a blue-shift of 50 nm in the reflectance spectrum in the infrared region. The total thickness of the device is only 3.5% of the working wavelength λ = 2.56 μm, and the rate of reflectance change reaches 5.16 at λ = 2.56 μm. Because the material that we use has advantages of easy fabrication and fast response, our design approach can be used for numerous applications on active plasmonic sensors and filters.