Mie resonance-mediated antireflection effects of Si nanocone arrays fabricated on 8-in. wafers using a nanoimprint technique

利用纳米压印技术在8英寸晶圆上制备的硅纳米锥阵列的米氏共振介导抗反射效应

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Abstract

We fabricated 8-in. Si nanocone (NC) arrays using a nanoimprint technique and investigated their optical characteristics. The NC arrays exhibited remarkable antireflection effects; the optical reflectance was less than 10% in the visible wavelength range. The photoluminescence intensity of the NC arrays was an order of magnitude larger than that of a planar wafer. Optical simulations and analyses suggested that the Mie resonance reduced effective refractive index, and multiple scattering in the NCs enabled the drastic decrease in reflection. PACS: 88.40.H-; 88.40.jp; 81.07.Gf.

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