Abstract
The degradation caused by surface states restricts the performance of near-surface semiconductor quantum dots (QDs). Here, we demonstrate optimized passivation techniques to improve the resonance fluorescence (RF) with dot-to-dot comparisons. These optimized techniques, for the first time, reduce the linewidth and noise level of existing pulsed-RF signals, as well as revive pulsed-RF signals which originally are vanishing. The improvements are confirmed to originate from reduced surface state density and electric field after passivation, through optical and surface science characterizations. Our study promotes applications of the passivation techniques in thin-film quantum devices, paving the way for the further development of optimal QD-based quantum light sources.