Cascade of zero-field Chern insulators in magic-angle bilayer graphene

魔角双层石墨烯中零场陈绝缘体的级联

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Abstract

The interplay between strong electron-electron interactions and symmetry breaking can have a profound influence on the topological properties of materials. In magic-angle twisted bilayer graphene (MATBG), the flat band with a single SU(4) flavor associated with the spin and valley degrees of freedom gains a non-zero Chern number when C (2z) symmetry or C (2z) T symmetry is broken. Electron-electron interactions can further lift the SU(4) degeneracy, leading to Chern insulator states. Here, we report a complete sequence of zero-field Chern insulators at all odd-integer fillings (ν = ±1, ±3) with different chiralities (C = 1 or -1) in hBN-aligned MATBG which structurally breaks C (2z) symmetry. The Chern states at hole fillings (v = -1, -3), which are firstly observed in this work, host an opposite chirality compared with the electron filling scenario. Furthermore, at the valence band filling ν = -7/2, the zero-field symmetry broken Chern insulator with C = -1 can be observed. Remarkably, a prominent Streda-formula violation around the v = -3 state has been observed. By doping the Chern gap at v = -3 with a notable number of electrons at finite magnetic field, the Hall resistance R (yx) robustly quantizes to ∼h/e (2), whereas the longitudinal resistance R (xx) vanishes, indicating that the chemical potential is pinned within a Chern gap, forming the magnetic field stabilized incommensurate Chern insulator states. By providing the first experimental observation of zero-field Chern insulators in the flat valence band, our work fills up the overall topological framework of MATBG with broken C (2z) symmetry.

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