Abstract
The development of reliable, highly sensitive hydrogen sensors is crucial for the safe implementation of hydrogen-based energy systems. This paper proposes a novel way to enhance the performance of hydrogen sensors through integrating Pd-SnO(2) nanofilms on the substrate with silicon nanowires (SiNWs). The samples were fabricated via a simple and cost-effective process, mainly consisting of metal-assisted chemical etching (MaCE) and electron beam evaporation. Structural and morphological characterizations were conducted using scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS). The experimental results showed that, compared to those without SiNW structure or decorative Pd nanoparticles, the Pd-decorated SnO(2) nanofilm integrated on the SiNW substrates exhibited significantly improved hydrogen sensing performance, achieving a response time of 9 s at 300 °C to 1.5% H(2) and a detection limit of 1 ppm. The enhanced performance can be primarily attributed to the large surface area provided by SiNWs, the efficient hydrogen spillover effect facilitated by Pd nanoparticles, and the abundant oxygen vacancies present on the surface of the SnO(2) nanofilm, as well as the Schottky barrier formed at the heterojunction interface between Pd and SnO(2). This study demonstrates a promising approach for developing high-performance H(2) sensors characterized by ultrafast response times and ultralow detection limits.