Abstract
This paper proposes a new encapsulation structure for aluminum nitride-based deep UV light-emitting diodes (DUV-LEDs) and eutectic flip chips containing polydimethylsiloxane (PDMS) fluid doped with SiO(2) nanoparticles (NPs) with a UV-transparent quartz hemispherical glass cover. Experimental results reveal that the proposed encapsulation structure has considerably higher light output power than the traditional one. The light extraction efficiency was increased by 66.49% when the forward current of the DUV-LED was 200 mA. Doping the PDMS fluid with SiO(2) NPs resulted in higher light output power than that of undoped fluid. The maximum efficiency was achieved at a doping concentration of 0.2 wt%. The optical output power at 200 mA forward current of the encapsulation structure with NP doping of the fluid was 15% higher than that without NP doping. The optical output power of the proposed encapsulation structure was 81.49% higher than that of the traditional encapsulation structure. The enhanced light output power was due to light scattering caused by the SiO(2) NPs and the increased average refractive index. The encapsulation temperature can be reduced by 4 °C at a driving current of 200 mA by using the proposed encapsulation structure.