Abstract
In spite of its superior chemical sensitivity, XPS depth profiling is rarely used because of the alteration introduced by the sputter removal process and the resulting inhomogeneous in-depth concentration distribution. Moreover, the application of XPS becomes increasingly challenging in the case of the analysis of thin layers, if the thickness is in the range of 2-3 inelastic mean free paths (IMFP) of the photoelectrons. In this paper we will show that even in these unfavorable cases the XPS depth profiling is applicable. Herein the XPS depth profiling of a model system tungsten-carbide-rich nano-layer of high hardness and corrosion resistance is presented. We will show that the problems arising because of the relatively high IMFP can be corrected by introducing a layer model for the calculation of the observed XPS intensities, while the alteration, e.g. ion mixing, compound formation and similar artefact, introduced by the sputter removal process can be handled by TRIDYN simulation. The method presented here overcomes the limitation of XPS depth profiling.