Abstract
Semiconductor photocatalysis is an effective strategy for solving the problems of increasing energy demand and environmental pollution. ZnIn(2)S(4)-based semiconductor photocatalyst materials have attracted much attention in the field of photocatalysis due to their suitable energy band structure, stable chemical properties, and good visible light responsiveness. In this study, ZnIn(2)S(4) catalysts were modified by metal ion doping, the construction of heterojunctions, and co-catalyst loading to successfully prepare composite photocatalysts. The Co-ZnIn(2)S(4) catalyst synthesized by Co doping and ultrasonic exfoliation exhibited a broader absorption band edge. Next, an a-TiO(2)/Co-ZnIn(2)S(4) composite photocatalyst was successfully prepared by coating partly amorphous TiO(2) on the surface of Co-ZnIn(2)S(4), and the effect of varying the TiO(2) loading time on photocatalytic performance was investigated. Finally, MoP was loaded as a co-catalyst to increase the hydrogen production efficiency and reaction activity of the catalyst. The absorption edge of MoP/a-TiO(2)/Co-ZnIn(2)S(4) was widened from 480 nm to about 518 nm, and the specific surface area increased from 41.29 m(2)/g to 53.25 m(2)/g. The hydrogen production performance of this composite catalyst was investigated using a simulated light photocatalytic hydrogen production test system, and the rate of hydrogen production by MoP/a-TiO(2)/Co-ZnIn(2)S(4) was found to be 2.96 mmol·h(-1)·g(-1), which was three times that of the pure ZnIn(2)S(4) (0.98 mmol·h(-1)·g(-1)). After use in three cycles, the hydrogen production only decreased by 5%, indicating that it has good cycle stability.