Abstract
Silicon (Si) has been proven to enhance the stress resistance of rice, but its effect on the lodging resistance of rice under dry cultivation (DCR) is still unclear. The purpose of this experiment is to clarify the appropriate amount of silicon fertilizer for DCR to resist lodging and to elucidate how it coordinates lodging resistance and yield. This experiment used the 'Suigeng 18' cultivar as the material and set six silicon fertilizers (SiO(2)) with dosages of 0, 15, 30, 45, 60, and 75 kg·ha(-1) (Si0, Si1, Si2, Si3, Si4, Si5). Analyze the effects and key indicators of silicon on lodging resistance of DCR from the perspectives of plant weight distribution, stem structure and composition, and root architecture. The results showed that the Si3 treatment had the highest yield and the lowest lodging index (LI). Si3 increases the weight of the upper three leaves and 4-5 internodes, thereby promoting panicle weight and yield. An increase of 13.38% in 2/3PWSI (weight of the 4th-5th stems and upper three leaves/weight of the 1st-3rd stems and lower leaves) can reflect the promoting effect of silicon on stem and leaf development near the panicle. Si3 reduces the GA/IAA value, shortens the length of the second internode, and increases the diameters of the major and minor axes, thereby increasing culm thickness and section modulus (SM), achieving the effect of "short and thick". Si3 also increases the content of silicon and non-structural carbohydrates (NSCs) in the second internode, and increases lignin and cellulose content by upregulating the expression levels of CAD7, PAL, COMT, and CesA4 genes, thereby increasing fullness and flexural strength (M), achieving "short, thick, and strong" and reducing LI. The 38.95% reduction in IFL (second internode length/fullness) reflects the positive effect of silicon on the "short, thick, and strong" stem. In the underground part, adding silicon reduces the CTK/IAA value of roots, and increases root length, root tip number, root surface area, and root weight. The key to coordinating the lodging resistance and yield of DCR with appropriate silicon dosage is to reduce the IFL in the second internode and increase 2/3 PWSI and root growth. The key to DCR and breeding is to focus on the relationship between basal internode length and fullness, as well as stem and leaf growth near the panicle.