Abstract
Topological matter plays a central role in today's condensed matter research. Zirconium pentatelluride (ZrTe(5)) has attracted attention as a Dirac semimetal at the boundary of weak and strong topological insulators (TI). Few-layer ZrTe(5) is anticipated to exhibit the quantum spin Hall effect due to topological states inside the band gap, but sample degradation inflicted by ambient conditions and processing has so far hampered the fabrication of high quality devices. The quantum Hall effect (QHE), serving as the litmus test for 2D systems to be considered of high quality, has not been observed so far. Only a 3D variant on bulk was reported. Here, we succeeded in preserving the intrinsic properties of thin films lifting the carrier mobility to ∼3500 cm(2) V(-1) s(-1), sufficient to observe the integer QHE and a bulk band gap related zero-energy state. The magneto-transport results offer evidence for the gapless topological states within this gap.