Abstract
The interface between the perovskite layer and the electron transport layer is an extremely important factor that cannot be ignored in achieving high-performance perovskite photovoltaic technology. However, the void defects of the interface pose a serious challenge for high performance perovskite solar cells (PSCs). To address this, we report a polydentate ligand reinforced chelating strategy to strengthen the stability of the buried interface by managing interfacial defects and stress. Gelatin-coupled cellulose (GCC) is employed to manipulate the buried interface. The unique functional groups in GCC synergistically passivate the defects from the surface of SnO(2) and the bottom surface of the perovskite layer. Our work demonstrates that by implementing GCC as a buried interface strategy, it is possible to prepare devices with reduced vacancy states, non-radiative recombination suppression, and excellent optoelectronic performance. At the same time, this work improves the efficiency and stability of PSCs and provides greater space for device manufacturing.