Abstract
Single-orientation stitching of graphene has emerged as the predominant method for growth of large-area, high-quality graphene films. Particularly noteworthy is graphene grown on single-crystalline Cu(111)/sapphire substrates, which exhibits exceptionally planar oriented stitching due to the atomically smooth substrate, facilitating the formation of continuous, high-quality graphene monolayer. These single-orientation stitches have conventionally been regarded as seamless with negligible defect concentrations. In this article, we present experimental observations regarding graphene grown on single-crystalline Cu(111)/sapphire substrates. Among the graphene flakes with single-orientation, our findings reveal two major merging behaviors: one producing the expected seamless stitching, and another unexpectedly generating structural defects that create nanoscale pathways permitting water permeation. Notably, we identify a unique merging structure-overlapped junction, in which the edge of one graphene flake overlaps and lies atop the edge of another flake, rather than forming a continuous atomic stitch. This discovery challenges the conventional anticipation of single-orientation stitched graphene films as seamless single crystalline film, while offers unique perspective for graphene applications in molecular sieving, selective filtration membranes, and protective coatings.