Abstract
A detailed understanding of the growth of noble metals by atomic layer deposition (ALD) is key for various applications of these materials in catalysis and nanoelectronics. The Pt ALD process using MeCpPtMe(3) and O(2) gas as reactants serves as a model system for the ALD processes of noble metals in general. The surface chemistry of this process was studied by in situ vibrational broadband sum-frequency generation (BB-SFG) spectroscopy, and the results are placed in the context of a literature overview of the reaction mechanism. The BB-SFG experiments provided direct evidence for the presence of CH(3) groups on the Pt surface after precursor chemisorption at 250 °C. Strong evidence was found for the presence of a C=C containing complex (e.g., the form of Cp species) and for partial dehydrogenation of the surface species during the precursor half-cycle. The reaction kinetics of the precursor half-cycle were followed at 250 °C, showing that the C=C coverage saturated before the saturation of CH(3). This complex behavior points to the competition of multiple surface reactions, also reflected in the temperature dependence of the reaction mechanism. The CH(3) saturation coverage decreased significantly with temperature, while the C=C coverage remained constant after precursor chemisorption on the Pt surface for temperatures from 80 to 300 °C. These SFG results have resulted in a better understanding of the Pt ALD process and also highlight the surface chemistry during thin-film growth as a promising field of study for the BB-SFG community.