Abstract
A split-gate double-channel asymmetric SiC trench MOSFET (SGDC-ATMOS) is proposed in this work. Besides a P(+) shielded region covering the bottom of the trench, a charge balance effect caused by the split gate further reduces the maximum gate oxide electric field (E(mox)) around the trench, which effectively improves the reliability of the SGDC structure. Additionally, the excellent capacitance characteristics is achieved by varying the length of the P(+) shielded region on the right side of the trench. The SGDC structure ensures better current conduction capability by adopting a double conduction channel. Furthermore, the SGDC structure also introduces a current spreading layer to alleviate the junction field-effect transistor (JFET) effect. Simulations demonstrate that, compared with the conventional asymmetric trench MOSFET (C-ATMOS), the SGDC structure shows a 31.5% reduction in the E(mox), a 98.4% reduction in the gate-drain capacitance, and a 5% reduction in specific on-resistance, which demonstrates superior gate oxide reliability and dynamic characteristics, making it better suited for the high-performance and low power-loss applications.