Abstract
A high-quality organolead trihalide perovskite film with large-sized crystalline grains and smooth surfaces is required to obtain efficient perovskite solar cells (PSCs). Herein, high-quality (FAPbI3)0.97(MAPbBr3)0.03 perovskite films were fabricated using trimesic acid (TMA) additives in a halide perovskite precursor solution to obtain efficient PSCs. The X-ray diffraction analysis and scanning electron microscopy of the films revealed that the TMA had a significant effect on the roughness of the films by acting as a surface link, thus reducing the surface defects and recombination at the grain boundaries. In addition, with the addition of the TMA additive, a smooth perovskite film with a flat surface and no pinholes was obtained. The perovskite film was used to fabricate a PSC device, and the device exhibited a high power conversion efficiency of 17.26%, which was higher than that of the control device (15.15%) under the same conditions. This study demonstrates a facile method to passivate defects on the perovskite layer via surface modification.