Abstract
To meet the urgent market demand for small package size and high reliability performance for automotive CMOS image sensor (CIS) application, wafer level chip scale packaging (WLCSP) technology using through silicon vias (TSV) needs to be developed to replace current chip on board (COB) packages. In this paper, a WLCSP with the size of 5.82 mm × 5.22 mm and thickness of 850 μm was developed for the backside illumination (BSI) CIS chip using a 65 nm node with a size of 5.8 mm × 5.2 mm. The packaged product has 1392 × 976 pixels and a resolution of up to 60 frames per second with more than 120 dB dynamic range. The structure of the 3D package was designed and the key fabrication processes on a 12" inch wafer were investigated. More than 98% yield and excellent optical performance of the CIS package was achieved after process optimization. The final packages were qualified by AEC-Q100 Grade 2.