Reconfigurable optoelectronic memristive architecture based on doped nanowire array for in-memory parallel perception and computation

基于掺杂纳米线阵列的可重构光电忆阻器架构,用于内存并行感知和计算

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Abstract

Advanced hardware functional integration for emergent computing paradigms facilitates the potential optimization of computational redundancy in artificial intelligence. However, the device design for parallel perception and in-memory computing remains challenging. To develop a state-of-the-art integrated functional memory, this study demonstrates a reconfigurable optoelectronic memristive architecture (ROMA) based on a doped nanowire array for in situ parallel perception and in-sensor computation. The memristor based on In(2)S(3-X)As(X) exhibits favorable photoconductive retention and reconfigurable optoelectronic modulation, which originates from vacancy engineering induced by doping modulation. The memristive performance of In(2)S(3-X)As(X) can be tuned by controlling the doping dose. A monolithically integrated array demonstrates an improvement of the discriminative state by more than two orders of magnitude with a double sampling of the output signal, and achieves recognition and encoding of 12-bit binary optical signals on a single column. The nanowire memristive architecture provides an efficient hardware foundation for highly parallel and efficiently distributed computational paradigms.

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