Abstract
This study addresses the critical challenge of lateral acoustic wave energy leakage in high-frequency film bulk acoustic resonators (FBARs) and elucidates the reflection mechanism of acoustic waves at acoustic reflection boundaries. Based on the theory of acoustic impedance mismatch, a novel Mo/SiC composite microstructure is designed to strategically establish multiple acoustic reflection boundaries along the lateral acoustic wave leakage paths. Finite element simulations reveal that SiC microstructures effectively suppress vibration amplitudes in non-resonant regions, thereby preventing acoustic wave leakage. By integrating Mo and SiC microstructures, the proposed composite structure significantly enhances the resonator's acoustic confinement and energy retention capabilities. A resonator incorporating this Mo/SiC composite microstructure is fabricated, achieving a series resonance frequency of 6.488 GHz and a remarkable quality factor (Q) of 310. This represents a substantial 51.2% improvement in Q compared to the basic FBAR, confirming the effectiveness of the proposed design in mitigating lateral acoustic wave leakage and enhancing resonator performance for high-frequency, low-loss applications. This work offers valuable insights into the design of next-generation RF resonators for advanced wireless communication systems.