Abstract
Silicon oxide-based memristors have been extensively studied due to their compatibility with the dominant silicon complementary metal-oxide-semiconductor (CMOS) fabrication technology. However, the variability of resistance switching (RS) parameters is one of the major challenges for commercialization applications. Owing to the filamentary nature of most RS devices, the variability of RS parameters can be reduced by doping in the RS region, where conductive filaments (CFs) can grow along the locations of impurities. In this work, we have successfully obtained RS characteristics in Pt dispersed silicon oxide-based memristors. The RS variabilities and mechanisms have been analyzed by screening the statistical data into different resistance ranges, and the distributions are shown to be compatible with a Weibull distribution. Additionally, a quantum points contact (QPC) model has been validated to account for the conductive mechanism and further sheds light on the evolution of the CFs during RS processes.