Development of Vacuum-Chamber-Type Capacitive Micro-Pressure Sensors

真空腔式电容微压力传感器的研制

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Abstract

This study presents the development of a capacitive pressure sensor tailored for measuring the dynamic pressure of flow fields. The sensor is fabricated using the UMC 0.18 μm CMOS-MEMS process, incorporated with additional post-processing steps such as metal wet etching, supercritical CO(2) drying, and parylene encapsulation. The sensing architecture employs AD7746 as a capacitance-to-voltage converter (CVC), enabling the conversion of capacitance signals into voltage outputs for enhanced measurement fidelity. Structurally, the capacitive pressure sensor features a vacuum-sealed diaphragm capsule design with dual movable circular membranes functioning as sensing electrodes. A contact-mode capacitive configuration with a trapezoidal or Gong-like vacuum-chamber diaphragm is adopted to improve linearity and sensitivity. The output sensitivity was determined to be feasible for measuring dynamic pressure at 1-2 Pa resolution.

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