Band-Like Charge Transport in Cs(2)AgBiBr(6) and Mixed Antimony-Bismuth Cs(2)AgBi(1-x) Sb (x) Br(6) Halide Double Perovskites

Cs(2)AgBiBr(6)和混合锑铋Cs(2)AgBi(1-x)Sb(x)Br(6)卤化物双钙钛矿中的带状电荷传输

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Abstract

Recently, halide double perovskites (HDPs), such as Cs(2)AgBiBr(6), have been reported as promising nontoxic alternatives to lead halide perovskites. However, it remains unclear whether the charge-transport properties of these materials are as favorable as for lead-based perovskites. In this work, we study the mobilities of charges in Cs(2)AgBiBr(6) and in mixed antimony-bismuth Cs(2)AgBi(1-x) Sb (x) Br(6), in which the band gap is tunable from 2.0 to 1.6 eV. Using temperature-dependent time-resolved microwave conductivity techniques, we find that the mobility is proportional to T (-p) (with p ≈ 1.5). Importantly, this indicates that phonon scattering is the dominant scattering mechanism determining the charge carrier mobility in these HDPs similar to the state-of-the-art lead-based perovskites. Finally, we show that wet chemical processing of Cs(2)AgBi(1-x) Sb (x) Br(6) powders is a successful route to prepare thin films of these materials, which paves the way toward photovoltaic devices based on nontoxic HDPs with tunable band gaps.

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