Incomplete Charge Collection at Inter-Pixel Gap in Low- and High-Flux Cadmium Zinc Telluride Pixel Detectors

低通量和高通量碲化镉锌像素探测器中像素间隙处的电荷收集不完全

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Abstract

The success of cadmium zinc telluride (CZT) detectors in room-temperature spectroscopic X-ray imaging is now widely accepted. The most common CZT detectors are characterized by enhanced-charge transport properties of electrons, with mobility-lifetime products μeτe > 10(-2) cm(2)/V and μhτh > 10(-5) cm(2)/V. These materials, typically termed low-flux LF-CZT, are successfully used for thick electron-sensing detectors and in low-flux conditions. Recently, new CZT materials with hole mobility-lifetime product enhancements (μhτh > 10(-4) cm(2)/V and μeτe > 10(-3) cm(2)/V) have been fabricated for high-flux measurements (high-flux HF-CZT detectors). In this work, we will present the performance and charge-sharing properties of sub-millimeter CZT pixel detectors based on LF-CZT and HF-CZT crystals. Experimental results from the measurement of energy spectra after charge-sharing addition (CSA) and from 2D X-ray mapping highlight the better charge-collection properties of HF-CZT detectors near the inter-pixel gaps. The successful mitigation of the effects of incomplete charge collection after CSA was also performed through original charge-sharing correction techniques. These activities exist in the framework of international collaboration on the development of energy-resolved X-ray scanners for medical applications and non-destructive testing in the food industry.

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