Abstract
The estimation of the characteristic parameters of the electrical contacts in CdZnTe and CdTe detectors is related to the identification of the main transport mechanisms dominating the currents. These investigations are typically approached by modelling the current-voltage (I-V) curves with the interfacial layer-thermionic-diffusion (ITD) theory, which incorporates the thermionic emission, diffusion and interfacial layer theories into a single theory. The implementation of the ITD model in measured I-V curves is a critical procedure, requiring dedicated simplifications, several best fitting parameters and the identification of the voltage range where each transport mechanism dominates. In this work, we will present a novel method allowing through a simple procedure the estimation of some characteristic parameters of the metal-semiconductor interface in CdZnTe and CdTe detectors. The barrier height and the effects of the interfacial layer will be evaluated through the application of a new function related to the differentiation of the experimental I-V curves.