Abstract
In order to improve the energy conversion efficiency and power density of the tritium-powered betavoltaic battery, titanium was deposited on the inner surface of the deep porous three-dimensional structure semiconductor as a tritium absorption material. Therefore, magnetron sputtering technology was used to explore the parameters of titanium coating on the inner surface of a deep porous semiconductor. First, the effects of argon pressure and sputtering power on the properties of titanium films were studied. The properties of the titanium films were characterized by a scanning electron microscope and an atomic force microscope. The optimized sputtering parameters were obtained as follows: argon pressure of 0.5 Pa and sputtering power of 80 W. Based on this parameter, the background vacuum and coating angle were changed, and the titanium film was coated in the deep porous structure. Energy dispersive spectrometry line scan and surface scan were used to analyze the coating results, which showed that these two parameters directly affected the content of titanium in the channel, and the area of titanium in the channel structure accounted for more than 50% under each test condition.