Abstract
The formation of circularly ordered Ge-islands on Si(001) has been achieved because of nonuniform strain field around the periphery of the holes patterned by focused ion beam in combination with a self-assembled growth using molecular beam epitaxy. The photoluminescence (PL) spectra obtained from patterned areas (i.e., ordered islands) show a significant signal enhancement, which sustained till 200 K, without any vertical stacking of islands. The origin of two activation energies in temperature-dependent PL spectra of the ordered islands has been explained in detail.