Protocol for depositing transparent conductive Ta-doped SnO(2) film by hollow cathode gas flow sputtering technology

采用空心阴极气体流动溅射技术沉积透明导电Ta掺杂SnO(2)薄膜的方案

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Abstract

Transparent conductive Ta-doped SnO(2) (SnO(2): Ta) thin film with low surface roughness, low resistivity, and high carrier concentration is one potential alternative of commercial transparent conductive oxides (TCOs). Here, we present a protocol for fabricating tin oxide films by hollow cathode gas flow sputtering technology. We describe steps for preparing and cleaning substrate, and film deposition process on the fresh uncorroded float glass substrate. We then detail procedures for measuring the optical and electrical properties of the film. For complete details on the use and execution of this protocol, please refer to Huo et al.(1).

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