Contactless THz-based bulk semiconductor mobility measurements using two-photon excitation

基于双光子激发的非接触式太赫兹体半导体迁移率测量

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Abstract

We perform contactless bulk mobility measurements for ZnSe, ZnTe, GaP, CdS, and GaSe in an optical pump THz probe experiment. As opposed to above-gap excitation or contact methods, two-photon absorption excites the entire sample thickness producing measurable signals with 10(13) carriers/cm(3) and higher density. For ZnTe and GaSe samples, the measured mobility using two-photon excitation is higher than that measured with one-photon excitation.

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