Large Proximity-Induced Spin Lifetime Anisotropy in Transition-Metal Dichalcogenide/Graphene Heterostructures

过渡金属二硫化物/石墨烯异质结构中较大的邻近效应诱导自旋寿命各向异性

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Abstract

Van der Waals heterostructures have become a paradigm for designing new materials and devices in which specific functionalities can be tailored by combining the properties of the individual 2D layers. A single layer of transition-metal dichalcogenide (TMD) is an excellent complement to graphene (Gr) because the high quality of charge and spin transport in Gr is enriched with the large spin-orbit coupling of the TMD via the proximity effect. The controllable spin-valley coupling makes these heterostructures particularly attractive for spintronic and opto-valleytronic applications. In this work, we study spin precession in a monolayer MoSe(2)/Gr heterostructure and observe an unconventional, dramatic modulation of the spin signal, showing 1 order of magnitude longer lifetime of out-of-plane spins compared to that of in-plane spins (τ(⊥) ≈ 40 ps and τ(∥) ≈ 3.5 ps). This demonstration of a large spin lifetime anisotropy in TMD/Gr heterostructures, is a direct evidence of induced spin-valley coupling in Gr and provides an accessible route for manipulation of spin dynamics in Gr, interfaced with TMDs.

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