Abstract
Lead-free tin perovskite solar cells (PSCs) have undergone rapid development in recent years and are regarded as a promising eco-friendly photovoltaic technology. However, a strategy to suppress charge recombination via a built-in electric field inside a tin perovskite crystal is still lacking. In the present study, a formamidinium tin iodide (FASnI(3)) perovskite absorber with a vertical Sn(2+) gradient was fabricated using a Lewis base-assisted recrystallization method to enhance the built-in electric field and minimize the bulk recombination loss inside the tin perovskites. Depth-dependent X-ray photoelectron spectroscopy revealed that the Fermi level upshifts with an increase in Sn(2+) content from the bottom to the top in this heterogeneous FASnI(3) film, which generates an additional electric field to prevent the trapping of photo-induced electrons and holes. Consequently, the Sn(2+)-gradient FASnI(3) absorber exhibits a promising efficiency of 13.82% for inverted tin PSCs with an open-circuit voltage increase of 130 mV, and the optimized cell maintains over 13% efficiency after continuous operation under 1-sun illumination for 1,000 h.