Abstract
An original metal catalyzed CVD methodology assisted by hydrogen plasma for the direct deposition of few-layer graphene on a substrate is presented. Graphene is grown at 900 °C directly on the surface of the substrate of technological interest by carbon diffusion through a nickel film by using methane (CH(4)) as the carbon precursor. Hydrogen atoms in the H(2)-plasma downstream are used to promote the solubilization of carbon atoms in Ni, thus favouring the growth of graphene at the Ni/substrate interface. Structural and transport properties of the as-grown multilayer graphene films on SiO(2)/Si and quartz substrates are provided. We demonstrate the peculiarity of this approach for controlling the thickness and transport properties of as-grown graphene films using process-step times. Finally, the potential of the proposed methodology for the bottom-up direct growth of patterned graphene is demonstrated.