Abstract
We present a facile synthetic approach for the growth of two-dimensional CsPbBr(3) nanoplatelets (NPLs) in the temperature range of 50-80 °C via the vacuum-assisted low-temperature (VALT) method. In this method, we utilized the solubility of the PbBr(2) precursor at temperatures high than the reaction temperature, thus making Br available during the reaction to form NPLs with fewer defects. The high chemical availability of Br during the reaction changes the growth dynamics and formation of highly crystalline nanoplatelets. Using this method, we have synthesized NPLs with an emission wavelength range of 450 to 485 nm that have high photoluminescence quantum yields (PLQY) from 80 to 100%. The synthesized NPLs retain their initial PLQY of about 80% after one month at ambient conditions. The formation of NPLs with fewer defects and enhanced radiative recombination was further confirmed by X-ray diffraction (XRD), reduced Urbach energy, time-resolved photocurrent measurements, X-ray photoelectron spectroscopy (XPS), and Fourier-transform infrared (FTIR) spectroscopy. Additionally, we utilized the synthesized NPLs for the fabrication of down-conversion light emitting diodes (LEDs), and the electroluminescence peak was barely shifted compared to the photoluminescence peak.